Plastic substrate with improved hardness and display device including the same

ABSTRACT

A plastic substrate includes: a plastic support member having light transmittance; and a first organic-inorganic hybrid layer on the plastic support member. The first organic-inorganic hybrid layer includes: a first organic-inorganic hybrid matrix; and ions implanted into the first organic-inorganic hybrid matrix at a side opposite to a side adjacent the plastic support member. An amount of the ions per unit area is in a range from about 2×10 13 /cm 2  to about 2×10 14 /cm 2 .

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2016-0087605, filed on Jul. 11, 2016, in the KoreanIntellectual Property Office (KIPO), the disclosure of which isincorporated by reference herein in its entirety.

BACKGROUND 1. Field

Embodiments of the present invention relate to a plastic substratehaving improved hardness, a method of manufacturing the plasticsubstrate having improved hardness and a display device including theplastic substrate having improved hardness.

2. Discussion of Related Art

With the recent development of mobile devices, such as smart phones andtablet PCs, thinner and slimmer display devices are desired.

A display device includes a window for protecting a display surface. Ingeneral, the window may include glass or tempered glass with goodmechanical properties. However, because glass is heavy and prone tobreakage by impact, materials that may replace glass are being studied.

Plastic materials may be a suitable substitute for glass. Plasticmaterials have the characteristic of being lightweight and not easilybroken. However, plastic materials generally have lower hardness andlower abrasion resistance than glass.

It is to be understood that this background of the technology section isintended to provide useful background information for understanding thetechnology disclosed herein. As such, the technology background sectiondisclosed herein may include ideas, concepts or recognitions that werenot part of what was known or appreciated by those skilled in thepertinent art prior to the effective filing date of the subject matterdisclosed herein.

SUMMARY

One or more embodiments of the present invention are directed to aplastic substrate having excellent hardness and abrasion resistance anda method of manufacturing the plastic substrate.

Further, one or more embodiments of the present invention are directedto a display device including the plastic substrate having excellenthardness and abrasion resistance.

According to an exemplary embodiment, a plastic substrate includes: aplastic support member having light transmittance; and a firstorganic-inorganic hybrid layer on the plastic support member. The firstorganic-inorganic hybrid layer includes; a first organic-inorganichybrid matrix; and ions implanted into the first organic-inorganichybrid matrix at an a side opposite to a side adjacent the plasticsupport member. An amount of the ions per unit area (an ion amount) isin a range from about 2×10¹³/cm² to about 2×10¹⁴/cm².

An implantation depth of the ions may be in a range from about 300 nm toabout 400 nm.

The ions may be implanted at an energy in a range from about 60 keV toabout 80 keV.

The ions may include at least one of a boron (B) ion and a nitrogen (N)ion.

The first organic-inorganic hybrid matrix may include a silicone resinand a polymer resin.

The first organic-inorganic hybrid layer may have a thickness rangingfrom about 2 μm to about 20 μm.

The plastic support member may include at least one selected from thegroup consisting of: a polycarbonate (PC) film, a polyacrylic film, apolymethyl methacrylate (PMMA) film, a polyimide (PI) film, apolyethylene (PET) film, a polypropylene (PP) film, a polystyrene (PS)film, a polyamide (PA) film, a polyacetal (POM) film, a polybutyleneterephthalate (PBT) film, a cellulose film and an acrylic-polycarbonatecopolymer alloy film.

The plastic substrate may further include a first inorganic layerbetween the plastic support member and the first organic-inorganichybrid layer.

The plastic substrate may further include a second organic-inorganichybrid layer between the plastic support member and the first inorganiclayer.

The plastic substrate may further include a first organic layer betweenthe plastic support member and the first organic-inorganic hybrid layer.

According to another exemplary embodiment, a method of manufacturing aplastic substrate includes: forming a first organic-inorganic hybridmatrix on a plastic support member, the plastic support member havinglight transmittance; and implanting ions into the firstorganic-inorganic hybrid matrix. An amount of the ions per unit area (anion amount) is in a range from about 2×10¹³/cm² to about 2×10¹⁴/cm².

An implantation depth of the ions may be in a range from about 300 nm toabout 400 nm.

The ions may be implanted at an energy in a range from about 60 keV toabout 80 keV.

The ions may include at least one of a boron (B) ion and a nitrogen (N)ion.

According to another exemplary embodiment, a display device includes: adisplay panel; and a window on the display panel. The window includes: aplastic support member having light transmittance; and a firstorganic-inorganic hybrid layer on the plastic support member, the firstorganic-inorganic hybrid layer including ions implanted at a side anopposite to a side adjacent the plastic support member. An amount of theions per unit area (an ion amount) is in a range from about 2×10¹³/cm²to about 2×10¹⁴/cm².

The foregoing is illustrative only and is not intended to be in any waylimiting. In addition to the illustrative aspects, exemplaryembodiments, and features described above, further aspects, exemplaryembodiments, and features will become apparent by reference to thedrawings and the following detailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the present invention will become moreapparent by describing in detail exemplary embodiments thereof withreference to the accompanying drawings, wherein:

FIG. 1 is a cross-sectional view illustrating a plastic substrateaccording to a first exemplary embodiment;

FIG. 2 is a cross-sectional view illustrating a plastic substrateaccording to a second exemplary embodiment;

FIG. 3 is a cross-sectional view illustrating a plastic substrateaccording to a third exemplary embodiment;

FIG. 4 is a cross-sectional view illustrating a plastic substrateaccording to a fourth exemplary embodiment;

FIG. 5 is a cross-sectional view illustrating a plastic substrateaccording to a fifth exemplary embodiment;

FIG. 6 is a cross-sectional view illustrating a plastic substrateaccording to a sixth exemplary embodiment;

FIG. 7 is a cross-sectional view illustrating a plastic substrateaccording to a seventh exemplary embodiment;

FIG. 8 is a cross-sectional view illustrating a plastic substrateaccording to an eighth exemplary embodiment;

FIG. 9 is a chart illustrating results of a scratch resistanceevaluation;

FIG. 10 is a chart illustrating results of a vibration abrasionresistance evaluation;

FIGS. 11A-11F are graphs illustrating ion intensity according to an ionimplantation depth;

FIG. 12 is a plan view illustrating an organic light emitting diode(“OLED”) display device according to a ninth exemplary embodiment;

FIG. 13 is a cross-sectional view taken along the line I-I′ of FIG. 12;

FIG. 14 is a cross-sectional view illustrating an OLED display deviceaccording to a tenth exemplary embodiment;

FIG. 15 is a plan view illustrating a liquid crystal display (“LCD”)device according to an eleventh exemplary embodiment; and

FIG. 16 is a cross-sectional view taken along the line II-II′ of FIG.15.

DETAILED DESCRIPTION

Exemplary embodiments are described more fully hereinafter withreference to the accompanying drawings. Although the invention may bemodified in various manners and has several exemplary embodiments, someexemplary embodiments are illustrated in the accompanying drawings andwill be mainly described in the specification. These embodiments areprovided as examples so that this disclosure will be thorough andcomplete, and will fully convey the aspects and features of the presentinvention to those skilled in the art. Accordingly, processes, elements,and techniques that are not necessary to those having ordinary skill inthe art for a complete understanding of the aspects and features of thepresent invention may not be described.

In the drawings, relative sizes, thicknesses, etc. of layers, elements,regions, and areas may be illustrated in an enlarged manner for clarityand ease of description thereof. When a layer, area, or plate isreferred to as being “on” another layer, area, or plate, it may bedirectly on the other layer, area, or plate, or intervening layers,areas, or plates may be present therebetween. Conversely, when a layer,area, or plate is referred to as being “directly on” another layer,area, or plate, intervening layers, areas, or plates may be absenttherebetween. Further when a layer, area, or plate is referred to asbeing “below” another layer, area, or plate, it may be directly belowthe other layer, area, or plate, or intervening layers, areas, or platesmay be present therebetween. Conversely, when a layer, area, or plate isreferred to as being “directly below” another layer, area, or plate,intervening layers, areas, or plates may be absent therebetween.

The spatially relative terms “below”, “beneath”, “less”, “above”,“upper” and the like, may be used herein for ease of description todescribe the relations between one element or component and anotherelement or component as illustrated in the drawings. It will beunderstood that the spatially relative terms are intended to encompassdifferent orientations of the device in use or operation, in addition tothe orientation depicted in the drawings. For example, in the case wherea device illustrated in the drawing is turned over, the devicepositioned “below” or “beneath” another device may be placed “above”another device. Accordingly, the illustrative term “below” may includeboth the lower and upper positions. The device may also be oriented inthe other direction and thus the spatially relative terms may beinterpreted differently depending on the orientations.

Throughout the specification, when an element is referred to as being“connected” to another element, the element is “directly connected” tothe other element, or “electrically connected” to the other element withone or more intervening elements interposed therebetween.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting of the present invention.As used herein, the singular forms “a” and “an” are intended to includethe plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises,”“comprising,” “includes” and/or “including,” when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items. Expressions such as “at least one of,” whenpreceding a list of elements, modify the entire list of elements and donot modify the individual elements of the list.

It will be understood that, although the terms “first,” “second,”“third,” and the like may be used herein to describe various elements,these elements should not be limited by these terms. These terms areonly used to distinguish one element from another element. Thus, “afirst element” discussed below could be termed “a second element” or “athird element,” and “a second element” and “a third element” may betermed likewise without departing from the teachings herein.

“About” or “approximately” as used herein is inclusive of the statedvalue and means within an acceptable range of deviation for theparticular value as determined by one of ordinary skill in the art,considering the measurement in question and the error associated withmeasurement of the particular quantity (i.e., the limitations of themeasurement system). For example, “about” may mean within one or morestandard deviations, or within ±30%, 20%, 10%, 5%, etc. of the statedvalue.

Unless otherwise defined, all terms used herein (including technical andscientific terms) have the same meaning as commonly understood by thoseskilled in the art to which this invention pertains. It will be furtherunderstood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an ideal or excessively formal sense unlessclearly defined in the present specification.

Further, the use of “may” when describing embodiments of the presentinvention refers to “one or more embodiments of the present invention.”In addition, the use of alternative language, such as “or,” whendescribing embodiments of the present invention, refers to “one or moreembodiments of the present invention” for each corresponding itemlisted. As used herein, the terms “use,” “using,” and “used” may beconsidered synonymous with the terms “utilize,” “utilizing,” and“utilized,” respectively. Also, the term “exemplary” is intended torefer to an example or illustration.

Also, any numerical range disclosed and/or recited herein is intended toinclude all sub-ranges of the same numerical precision subsumed withinthe recited range. For example, a range of “1.0 to 10.0” is intended toinclude all subranges between (and including) the recited minimum valueof 1.0 and the recited maximum value of 10.0, that is, having a minimumvalue equal to or greater than 1.0 and a maximum value equal to or lessthan 10.0, such as, for example, 2.4 to 7.6. Any maximum numericallimitation recited herein is intended to include all lower numericallimitations subsumed therein, and any minimum numerical limitationrecited in this specification is intended to include all highernumerical limitations subsumed therein. Accordingly, Applicant reservesthe right to amend this specification, including the claims, toexpressly recite any sub-range subsumed within the ranges expresslyrecited herein. All such ranges are intended to be inherently describedin this specification such that amending to expressly recite any suchsubranges would comply with the requirements of 35 U.S.C. §112(a) and 35U.S.C. §132(a).

Some of the parts which are not associated with the description may notbe provided in order to specifically describe embodiments of the presentinvention and like reference numerals refer to like elements throughoutthe specification.

Hereinafter, a first exemplary embodiment is described with reference toFIG. 1.

FIG. 1 is a cross-sectional view illustrating a plastic substrate 101according to a first exemplary embodiment.

The plastic substrate 101 according to the first exemplary embodimentincludes a plastic support member 110 having light transmittance and afirst organic-inorganic hybrid layer 121 on the plastic support member110.

A plastic film having light transmittance may be utilized as the plasticsupport member 110. For example, a polycarbonate (PC) film, apolyacrylic film, a polymethyl methacrylate (PMMA) film, a polyimide(PI) film, a polyethylene (PET) film, a polypropylene (PP) film, apolystyrene (PS) film, a polyamide (PA) film, a polyacetal (POM) film, apolybutylene terephthalate (PBT) film, a cellulose film and/or anacrylic-polycarbonate copolymer alloy film may be utilized as theplastic support member 110.

For example, a film including a copolymer of PC and PMMA may be used asthe plastic support member 110. The copolymer of PC and PMMA may includePC in an amount ranging from about 50 percent by weight (wt %) to about70 wt % and PMMA in an amount ranging from about 30 wt % to about 50 wt%. For example, a film including a copolymer of PC and PMMA in a weightratio of 6:4 may be utilized as the plastic support member 110.

The plastic support member 110 may have a thickness ranging from about400 μm to about 1000 μm. When the thickness of the plastic supportmember 110 is less than about 400 μm, the supporting strength may berelatively weak (or weakened), and when the thickness is greater thanabout 1000 μm, it is disadvantageous for slimming down the device (orthe device may be relatively thick).

The first organic-inorganic hybrid layer 121 may include a firstorganic-inorganic hybrid matrix 120 and an ion 150 implanted into thefirst organic-inorganic hybrid matrix 120.

The first organic-inorganic hybrid matrix 120 may include a polymerresin and a silicone resin.

The polymer resin may include at least one of an acrylic resin, aurethane resin and/or a urethane-acrylate resin. For example, aurethane-acrylate copolymer resin may be utilized as the polymer resin.However, the polymer resin is not limited thereto.

The silicone resin may include at least one of a monomer represented bythe following Chemical Formula 1 and a monomer represented by thefollowing Chemical Formula 2. For example, the silicone resin may beformed by polymerization of a composition including at least one of themonomer represented by the following Chemical Formula 1 and the monomerrepresented by the following Chemical Formula 2.

In Chemical Formula 1, respective ones of R₂₁, R₂₂, R₂₃ and R₂₄ are oneof an amino group, an epoxy group, a phenyl group, an acryl group and/ora vinyl group, and respective ones of R₂₅ and R₂₆ are hydrogen (H)and/or a hydrocarbon group having 1 to 6 carbon atoms.

For example, the first organic-inorganic hybrid matrix 120 may be formedby polymerization of a polymerizable composition including a polymerresin-forming monomer and/or a silicone resin-forming monomer.

The first organic-inorganic hybrid layer 121 has a thickness rangingfrom about 2 μm to about 20 μm.

When the thickness of the first organic-inorganic hybrid layer 121 isless than about 2 μm, the first organic-inorganic hybrid layer 121 maynot have sufficient strength and ion implantation may be difficult (ormay not be easy). In addition, when the thickness of the firstorganic-inorganic hybrid layer 121 is greater than about 20 μm, it isdisadvantageous for slimming down the device (or the device may berelatively thick).

The ions 150 may be implanted at (or on) a side of the firstorganic-inorganic hybrid matrix 120 that is opposite to the plasticsupport member 110. For example, the ions 150 may be implanted through asurface 120 a of the first organic-inorganic hybrid matrix 120 at (oron) an opposite side from the plastic support member 110.

An amount (or quantity) of ions 150 implanted into the firstorganic-inorganic hybrid matrix 120 may range from about 2×10¹³/cm² toabout 2×10¹⁴/cm². The amount of ions 150 is expressed by the number ofions per unit area (cm²). Hereinafter, an amount of ions 150 per unitarea is referred to as an “ion amount”.

When the ion amount is less than about 2×10¹³/cm², the hardness andstrength of the first organic-inorganic hybrid layer 121 may berelatively low (or lower than desired). In addition, when the ion amountexceeds about 2×10¹⁴/cm², yellow shift, i.e., a color shift towardyellow, may occur.

The ions 150 implanted into the first organic-inorganic hybrid matrix120 may include at least one of boron (B) ions and nitrogen (N) ions.The condition for boron (B) ion implantation and the condition fornitrogen (N) ion implantation may be different from each other.

An implantation depth of the ions 150 may be in a range from about 300nm to about 400 nm. The implantation depth of the ions 150 isrepresented by a distance dl from the surface 120 a.

According to the first exemplary embodiment, the ion amount of about2×10¹³/cm² or more is maintained from the surface 120 a of the firstorganic-inorganic hybrid matrix 120 to a depth of about 300 nm to about400 nm (or such that the distance dl is about 300 nm to about 400 nm).

When the implantation depth of the ions 150 is less than about 300 nm,strength of the first organic-inorganic hybrid layer 121 may beinsufficient (or relatively low). Further, when the ions 150 should beimplanted with high energy (or relatively high energy) in order toimplant ions 150 at an implantation depth of more than about 400 nm. Insuch an exemplary embodiment, the first organic-inorganic hybrid layer121 may be damaged.

According to the first exemplary embodiment, the ions 150 are implantedat an energy ranging from about 60 keV to about 80 keV. When the ionimplantation energy is less than about 60 keV, an ion implantationefficiency is lowered. In addition, when the ion implantation energyexceeds about 80 keV, the first organic-inorganic hybrid layer 121 maybe damaged during the ion implantation process.

The first organic-inorganic hybrid layer 121 may further includefluorine (F) in an amount ranging from about 0.001 wt % to about 0.2 wt% with respect to the total weight of the first organic-inorganic hybridlayer 121. In addition, an anti-finger layer may be provided on thefirst organic-inorganic hybrid layer 121.

A second exemplary embodiment is described below with reference to FIG.2. Hereinafter, in order to avoid duplication, descriptions ofcomponents that are the same or substantially the same as thosedescribed above may be omitted.

FIG. 2 is a cross-sectional view illustrating a plastic substrate 102according to the second exemplary embodiment.

The plastic substrate 102 according to the second exemplary embodimentincludes a plastic support member 110, a first inorganic layer 131 onthe plastic support member 110 and a first organic-inorganic hybridlayer 121 on the first inorganic layer 131.

The kind of the first inorganic layer 131 is not particularly limited.For example, the first inorganic layer 131 may include a layer includingan inorganic material.

The first inorganic layer 131 may include, for example, a siliconeresin. In addition, the first inorganic layer 131 may include a polymerresin and inorganic particles dispersed in the polymer resin. Forexample, the first inorganic layer 131 may include a polymer resin andsilicon oxide (SiOx) dispersed in the polymer resin.

When the first inorganic layer 131 includes a polymer connection group,the plastic support member 110 and the first inorganic layer 131 mayhave a strong bonding force.

The first inorganic layer 131 may have a thickness ranging from about 3μm to about 10 μm. When the thickness of the first inorganic layer 131is less than about 3 μm, the strength of the plastic substrate 102 maybe relatively weak (or weakened). In addition, when the thickness of thefirst inorganic layer 131 is greater than about 10 μm, it may bedisadvantageous to slim down the device (or the device may be relativelythick).

Hereinafter, a third exemplary embodiment is described with reference toFIG. 3.

FIG. 3 is a cross-sectional view illustrating a plastic substrate 103according to the third exemplary embodiment.

The plastic substrate 103 according to the third exemplary embodimentincludes a plastic support member 110, a first organic layer 141 on theplastic support member 110 and a first organic-inorganic hybrid layer121 on the first organic layer 141.

The kind of the first organic layer 141 is not particularly limited. Forexample, the first organic layer 141 may include at least one of anacrylic resin, a urethane resin and a urethane-acrylate resin. The firstorganic layer 141 may be formed by curing a coating solution for formingan organic layer.

The first organic layer 141 may serve as a buffer for stress generatedbetween layers.

The first organic layer 141 may have a thickness ranging from about 5 μmto about 10 μm. When the thickness of the first organic layer 141 isless than about 5 μm, an interlayer buffer effect may be reduced. Whenthe thickness is greater than about 10 μm, it may be disadvantageous toslim down the device (or the device may be relatively thick).

Hereinafter, a fourth exemplary embodiment is described with referenceto FIG. 4.

FIG. 4 is a cross-sectional view illustrating a plastic substrate 104according to the fourth exemplary embodiment.

The plastic substrate 104 according to the fourth exemplary embodimentincludes a plastic support member 110, a second organic-inorganic hybridlayer 122 on the plastic support member 110, a first inorganic layer 131on the second organic-inorganic hybrid layer 122 and a firstorganic-inorganic hybrid layer 121 on the first inorganic layer 131.

According to the fourth exemplary embodiment, ions 150 are not implantedinto the second organic-inorganic hybrid layer 122. The secondorganic-inorganic hybrid layer 122 may have a composition that issubstantially the same as that of a first organic-inorganic hybridmatrix 120 (see, e.g., FIG. 1).

Hereinafter, a fifth exemplary embodiment is described with reference toFIG. 5.

FIG. 5 is a cross-sectional view illustrating a plastic substrate 105according to the fifth exemplary embodiment.

The plastic substrate 105 according to the fifth exemplary embodimentincludes a plastic support member 110, a first organic-inorganic hybridlayer 121 on the plastic support member 110 and a thirdorganic-inorganic hybrid layer 123 on an opposite surface (or oppositeside) of the plastic support member 110 from the first organic-inorganichybrid layer 121.

For example, the first organic-inorganic hybrid layer 121 may be on (orat) a first surface of the plastic support member 110 and the thirdorganic-inorganic hybrid layer 123 may be on (or at) a second surface ofthe plastic support member 110. The first surface of the plastic supportmember 110 may be opposite to the second surface of the plastic supportmember 110.

According to the fifth exemplary embodiment, ions 150 are not implantedinto the third organic-inorganic hybrid layer 123. The thirdorganic-inorganic hybrid layer 123 may have a composition that issubstantially the same as that of the first organic-inorganic hybridmatrix 120.

Hereinafter, a sixth exemplary embodiment is described with reference toFIG. 6.

FIG. 6 is a cross-sectional view illustrating a plastic substrate 106according to the sixth exemplary embodiment.

The plastic substrate 106 according to the sixth exemplary embodimentincludes a plastic support member 110, a first inorganic layer 131 on(or at) a surface (or a first surface) of the plastic support member110, a first organic-inorganic hybrid layer 121 on the first inorganiclayer 131, a second inorganic layer 132 on (or at) another surface (or asecond surface) of the plastic support member 110 and a thirdorganic-inorganic hybrid layer 123 on the second inorganic layer 132.

The second inorganic layer 132 may have a composition that issubstantially the same as that of the first inorganic layer 131.

Hereinafter, a seventh exemplary embodiment will be described withreference to FIG. 7.

FIG. 7 is a cross-sectional view illustrating a plastic substrate 107according to the seventh exemplary embodiment.

The plastic substrate 107 according to the seventh exemplary embodimentincludes a plastic support member 110, a first organic layer 141 on (orat) a surface (or a first surface) of the plastic support member 110, afirst organic-inorganic hybrid layer 121 on the first organic layer 141,a second organic layer 142 on (or at) another surface (or a secondsurface opposite to the first surface) of the plastic support member 110and a third organic-inorganic hybrid layer 123 on the second organiclayer 142.

The second organic layer 142 may have a composition that issubstantially the same as that of the first organic layer 141.

Hereinafter, an eighth exemplary embodiment is described below withreference to FIG. 8.

FIG. 8 is a cross-sectional view illustrating a plastic substrate 108according to the eighth exemplary embodiment.

The plastic substrate 108 according to the eighth exemplary embodimentincludes a plastic support member 110, a second organic-inorganic hybridlayer 122 on (or at) a surface (or a first surface) of the plasticsupport member 110, a first inorganic layer 131 on the secondorganic-inorganic hybrid layer 122, a first organic-inorganic hybridlayer 121 on the first inorganic layer 131, a fourth organic-inorganichybrid layer 124 on (or at) another surface (or a second surfaceopposite to the first surface) of the plastic support member 110, asecond inorganic layer 132 on the fourth organic-inorganic hybrid layer124 and a third organic-inorganic hybrid layer 123 on the secondinorganic layer 132.

The second organic-inorganic hybrid layer 122, the thirdorganic-inorganic hybrid layer 123 and the fourth organic-inorganichybrid layer 124 may each have substantially the same composition.

A method of manufacturing a plastic substrate according to an exemplaryembodiment includes forming the first organic-inorganic hybrid matrix120 on the plastic support member 110 having light transmittingcharacteristics and implanting ions 150 into the first organic-inorganichybrid matrix 120.

Hereinafter, a method of manufacturing the plastic substrate 105according to the fifth exemplary embodiment by a dip coating method isdescribed.

According to some embodiments, in order to manufacture the plasticsubstrate 105, first, the plastic support member 110 is immersed in acoating solution for forming the organic-inorganic hybrid matrix suchthat a coating layer is formed on each of opposite sides of the plasticsupport member 110 (e.g., on a first surface of the plastic supportmember 110 and on a second surface of the plastic support member 110).

The coating layer formed on the first surface of the plastic supportmember 110 is cured and the ions 150 are implanted therein to form thefirst organic-inorganic hybrid layer 121. In addition, the coating layerformed on the second surface of the plastic support member 110 is curedto form the third organic-inorganic hybrid layer 123.

The coating solution for forming the organic-inorganic hybrid matrix mayinclude an organic binder component and a silicone monomer.

The silicone monomer includes at least one of a monomer represented bythe following Chemical Formula 1 and a monomer represented by thefollowing Chemical Formula 2.

In Chemical Formula 1, respective ones of R₂₁, R₂₂, R₂₃ and R₂₄ are oneof an amino group, an epoxy group, a phenyl group, an acryl group and/ora vinyl group, and respective ones of R₂₅ and R₂₆ are hydrogen (H)and/or a hydrocarbon group having 1 to 6 carbon atoms.

The organic binder component includes monomers, oligomers and/orphotoinitiators. The organic binder component may include a monomer inan amount ranging from about 20 wt % to about 60 wt %, an oligomer in anamount ranging from about 20 wt % to about 60 wt %, a rubber-basedflexible component in an amount ranging from about 10 wt % to about 50wt % and a photoinitiator in an amount ranging from about 1 wt % toabout 10 wt %, with respect to the total weight of the organic bindercomponent.

The monomer may include, for example, at least one of an acrylicmonomer, a urethane monomer, and a urethane-acrylic monomer.

The oligomer may use urethane (metha) acrylate having a weight averagemolecular weight (Mw) ranging from about 5,000 to about 50,000.

When the weight average molecular weight (Mw) of the oligomer is morethan about 50,000, opacity in a high temperature and high humidityenvironment may be unsuitable. When the weight average molecular weight(Mw) of the oligomer is less than about 5,000, the coating solution forforming an organic-inorganic hybrid layer may not be maintained in asolid state at room temperature.

As an example, after the first and second inorganic layers 131 and 132are formed on opposite sides of the plastic support member 110, thefirst and third organic-inorganic hybrid layers 121 and 123 may beformed thereon (see, e.g., FIG. 6).

As another example, after the first and second organic layers 141 and142 are formed on opposite sides of the plastic support member 110, thefirst and third organic-inorganic hybrid layers 121 and 123 may beformed thereon (see, e.g., FIG. 7).

As another example, after the second and fourth organic-inorganic hybridlayers 122 and 124 are formed on opposite sides of the plastic supportmember 110, the first and second inorganic layers 131 and 132 are formedthereon, and then the first and third organic-inorganic hybrid layers121 and 123 may be formed thereon (see, e.g., FIG. 8).

For evaluation of ion implantation characteristics, a sample having astructure that is substantially the same as that of the plasticsubstrate 101 described above in reference to the first exemplaryembodiment is produced.

For example, a polycarbonate film having a thickness of about 550 μm isutilized as the plastic support member 110. The first organic-inorganichybrid matrix 120 including a urethane acrylate resin (a polymer resin)in an amount of about 60 wt % and a silicone resin in an amount of about40% is disposed on the plastic support member 110 to form each sample.

Next, boron (B) ions are implanted into the first organic-inorganichybrid matrix 120 of each sample according to the ion implantationconditions illustrated in Table 1 below to produce a plastic substrate.The evaluation results of the physical properties are illustrated inTable 1.

TABLE 1 Ion implantation condition Ion Property Evaluation amount PencilTransmittance Reflectance Chromaticity Sample No. Kind Energy (/cm²)hardness (%) (%) Appearance YI (b*) Reference — — — 7H 91.6 7.9transparent 1.1 −0.4 Example 1 Sample 1 Boron 80 kev 1 × 10¹⁴ 8H 92.18.1 transparent 1.5 −0.3 Sample 2 Boron 80 kev 2 × 10¹⁴ 8H 90.7 8.4discolored 3.2 −0.2 Sample 3 Boron 80 kev 3 × 10¹⁴ 7~8H 90.2 8.5discolored 4.6 0.1 Sample 4 Boron 80 kev 5 × 10¹⁴ 8H~9H  89.4 8.6discolored 9.2 1.0 Sample 5 Boron 80 kev 1 × 10¹⁵ 9H 80.9 8.8 discolored26.6 3.5 Sample 6 Boron 60 kev 1 × 10¹⁴ 7~8H 92.0 8.2 transparent 1.4−0.2 Sample 7 Boron 60 kev 2 × 10¹⁴ 7~8H 90.4 8.5 transparent 2.8 0.1Sample 8 Boron 60 kev 3 × 10¹⁴ 8H 90.3 8.6 discolored 3.7 0.6 Sample 9Boron 60 kev 5 × 10¹⁴ 8H 90.0 8.8 discolored 6.3 1.2 Sample 10 Boron 60kev 1 × 10¹⁵ 8~9H 86.1 9.1 discolored 15.2 2.9

In Table 1, Reference Example 1 is a sample in which ion implantation isnot performed.

The evaluation methods of physical properties illustrated in Table 1 areas follows.

The pencil hardness is evaluated in accordance with the pencil hardnesstest specified in JIS K 5600-5-4. For example, the pencil hardness ismeasured five times on the sample with respect to a weight of 1 kg, andthe smallest value is selected as a pencil hardness of the sample.

In the pencil hardness, the reference marks “H,” “F” and “B,” initialsof “hard,” “firm,” and “black,” respectively, represent hardness andconcentration. As a number of an “H” lead or a “B” lead increases, the“H” lead becomes harder, whereas the “B” lead becomes smoother. That is,“9H” denotes a highest hardness, and the hardness decreases in thefollowing order: 8H, 7H, 6H, 5H, 4H, 3H, 2H, H, F, B, 2B, 3B, 4B, 5B,6B, 7B, 8B and 9B.

For evaluation of the optical characteristics, transmittance andreflectance are measured using a spectrophotometer (exemplary devicename: “COH-400”).

For appearance evaluation, discoloration of the sample is visuallyidentified. For example, it is evaluated whether or not the yellow shiftis observed in the sample.

The reference mark “YI” indicates a yellow index. The larger the YIvalue is, the larger the yellow shift.

The chromaticity (b*) represents the yellow shift according to the CIE1976(L*,a*,b*) color coordinates. Herein, a positive value of 1b*corresponds to the degree of yellow shift and a negative value of 1b*corresponds to the degree of blue shift.

Referring to Table 1, in particular, Sample 1, Sample 6 and Sample 7 areevaluated to have excellent physical properties.

In addition, nitrogen (N) ions are implanted into the firstorganic-inorganic hybrid matrix 120 of each sample according to the ionimplantation conditions illustrated in Table 2 below to produce aplastic substrate. The evaluation results of the physical properties areillustrated in Table 2.

TABLE 2 Ion implantation condition Ion Property Evaluation amount PencilTransmittance Reflectance Chromaticity Sample No. Kind Energy (/cm²)hardness (%) (%) Appearance YI (b*) Reference — — — 5H 91.8 8.0transparent 0.8 −0.3 Example 2 Sample 11 Nitrogen 80 kev 1 × 10¹³ 5H92.0 7.9 transparent 0.7 0.2 Sample 12 Nitrogen 80 kev 2 × 10¹³ 6H 91.48.4 transparent 1.1 0.1 Sample 13 Nitrogen 80 kev 5 × 10¹³ 5H 89.7 8.4transparent 2.5 1.1 Sample 14 Nitrogen 80 kev 1 × 10¹⁴ 5H 86.0 8.8discolored 4.4 2.5 Sample 15 Nitrogen 80 kev 2 × 10¹⁴ 5H 85.5 10.0discolored 9.0 4.6 Sample 16 Nitrogen 60 kev 1 × 10¹³ 6H 92.0 7.8transparent 0.5 −0.2 Sample 17 Nitrogen 60 kev 2 × 10¹³ 4H 91.6 8.1transparent 0.8 −0.3 Sample 18 Nitrogen 60 kev 5 × 10¹³ 6H 91.3 8.4transparent 1.1 0.5 Sample 19 Nitrogen 60 kev 3 × 10¹⁴ 5H 80.0 9.8discolored 11.6 10.1

Referring to Table 2, Samples 12, 16, 17 and 18 are evaluated to haveexcellent physical properties.

FIG. 9 shows the results of a scratch resistance evaluation.

For scratch resistance evaluation, scratch resistance evaluation using asteel wool is performed. The scratch resistance evaluation method usinga steel wool is as follows. A sample having a size of 200 mm×200 mm ismanufactured using a plastic substrate. In addition, a cylinder having adiameter of about 25 mm and a flat surface having a steel wool #0000uniformly attached thereto is prepared. Subsequently, a surface of thesample is rubbed back and forth six hundred times with the flat surfaceof the cylinder having the steel wool #0000 thereon, with a weight ofabout 1.0 kg at a speed of about 100 mm a second, and the depth andwidth of scratches generated on the surface of the sample are measured.The scratch resistance evaluation results for Reference Example 1 andSamples 1, 6 and 9 are shown in FIG. 9.

Referring to FIG. 9, samples 6 and 9 have particularly excellent scratchresistance.

FIG. 10 shows the results of a vibration abrasion resistance evaluation.

For evaluating vibration abrasion resistance, a commercially availablevibration abrasion tester (e.g., a Rösler vibration abrasion tester) isutilized. Vibration and abrasion are applied to the sample by using thevibration abrasion tester. The abrasion resistance is evaluated by theratio of abrasion resistance of samples to glass over time. FIG. 10shows results of vibration abrasion resistance evaluation for Samples 1,4, 6 and 9.

Referring to FIG. 10, Samples 1 and 9 have excellent abrasionresistance.

Referring to Tables 1 and 2 and FIGS. 9 and 10, when the ion amount isin a range from about 2×10¹³/cm² to about 2×10¹⁴/cm² and the ionimplantation energy is in a range from about 60 keV to about 80 keV, thesample is evaluated to have excellent physical properties.

FIGS. 11A, 11B, 11C, 11D, 11E and 11F are graphs illustrating ionintensity depending on an ion implantation depth.

For example, FIGS. 11A, 11B, 11C, 11D, 11E and 11F illustrate the ionintensity (c/s) depending on the ion implantation depth (nm) when ions150 are implanted into the first organic-inorganic hybrid matrix 120.

FIG. 11A shows the ion intensity depending on the ion implantation depthwhen ions 150 of about 1.0×10¹⁴/cm² are implanted with an energy ofabout 80 keV, FIG. 11B shows the ion intensity depending on the ionimplantation depth when ions 150 of about 5.0×10¹⁴/cm² are implantedwith an energy of about 80 keV, FIG. 11C shows the ion intensitydepending on the ion implantation depth when ions 150 of about1.0×10¹⁵/cm² are implanted with an energy of about 80 keV, FIG. 11Dshows the ion intensity depending on the ion implantation depth whenions 150 of about 1.0×10¹⁴/cm² are implanted with an energy of about 60keV, FIG. 11E shows the ion intensity depending on the ion implantationdepth when ions 150 of about 5.0×10¹⁴/cm² are implanted with an energyof about 60 keV, and FIG. 11F shows the ion intensity depending on theion implantation depth when ions 150 of about 1.0×10¹⁵/cm² are implantedwith an energy of about 60 keV.

The samples according to FIGS. 11A, 11B, 11C, 11D, 11E and 11F arereferred to as Test Examples 1, 2, 3, 4, 5 and 6, respectively. For eachtest example, the ion intensity depending on the ion implantation depthwas measured twice.

The arrow illustrated in FIGS. 11A, 11B, 11C, 11D, 11E and 11F indicatesa critical point of ion intensity. The depth at the critical point ofion intensity is referred to as the ion implantation depth.

The results of FIGS. 11A, 11B, 11C, 11D, 11E and 11F may be summarizedin Table 3 below.

TABLE 3 Ion Ion Implantation Implantation amount Critical pointIntensity Test example energy (/cm²) (nm) (c/s) 1 80 keV 1.0 × 10¹⁴ 38019 (FIG. 11A) 365 18 2 80 keV 5.0 × 10¹⁴ 360 67 (FIG. 11B) 335 65 3 80keV 1.0 × 10¹⁵ 380 116 (FIG. 11C) 385 112 4 60 keV 1.0 × 10¹⁴ 330 33(FIG. 11D) 315 21 5 60 keV 5.0 × 10¹⁴ 304 51 (FIG. 11E) 330 65 6 60 keV1.0 × 10¹⁵ 300 156 (FIG. 11F) 300 143

Referring to FIGS. 11A, 11B, 11C, 11D, 11E and 11F, when ions 150 areimplanted at an energy ranging from about 60 keV to about 80 keV, ions150 are implanted to a depth ranging from about 300 nm to about 400 nm.

Hereinafter, an organic light emitting diode (“OLED”) display device 109according to a ninth exemplary embodiment is described with reference toFIGS. 12 and 13. FIG. 12 is a plan view illustrating an OLED displaydevice 109 according to the ninth exemplary embodiment, and FIG. 13 is across-sectional view taken along the line I-I′ of FIG. 12.

The OLED display device 109 according to the ninth exemplary embodimentincludes a display panel 210 and a window 100 on the display panel 210.

The display panel 210 of the OLED display device 109 according to theninth exemplary embodiment includes a first substrate 211, a drivingcircuit unit 230 and an OLED 310.

The first substrate 211 may include an insulating material such asglass, quartz, ceramic, plastic, or the like. Further, a polymer filmmay be utilized for the first substrate 211.

A buffer layer 221 is disposed on the first substrate 211. The bufferlayer 221 may include one or more layers selected from various inorganiclayers and organic layers. The buffer layer 221 may be omitted.

The driving circuit unit 230 is disposed on the buffer layer 221. Thedriving circuit unit 230 includes a plurality of thin film transistors(“TFTs”) (e.g., a switching TFT 10 and a driving TFT 20) and drives theOLED 310. For example, the OLED 310 emits light in accordance with adriving signal received from the driving circuit unit 230 to display animage.

FIGS. 12 and 13 illustrate an active matrix-type organic light emittingdiode (AMOLED) display device 109 having a 2Tr-1Cap structure. Forexample, the 2Tr-1Cap structure may include two TFTs, e.g., theswitching TFT 10 and the driving TFT 20 and one capacitor 80 in eachpixel, but exemplary embodiments are not limited thereto. For example,the OLED display device 109 may include three or more TFTs and two ormore capacitors in each pixel and may further include additionalwirings. Herein, the term “pixel” refers to a smallest unit fordisplaying an image and the OLED display device 109 displays an imageusing a plurality of pixels.

Each pixel PX includes the switching TFT 10, the driving TFT 20, thecapacitor 80 and the OLED 310. In addition, a gate line 251 extendingalong one direction (or a first direction) and a data line 271 and acommon power line 272 insulated from and intersecting the gate line 251are also provided at the driving circuit unit 230. Each pixel PX may bedefined by the gate line 251, the data line 271 and the common powerline 272 as a boundary, but exemplary embodiments are not limitedthereto. For example, the pixels PX may be defined by a pixel defininglayer and/or a black matrix.

The OLED 310 includes a first electrode 311, a light emitting layer 312on the first electrode 311 and a second electrode 313 on the lightemitting layer 312. The light emitting layer 312 includes a lowmolecular organic material or a high molecular organic material. Holesand electrons are injected into the light emitting layer 312 from thefirst electrode 311 and the second electrode 313, respectively, andcombined therein to form an exciton. The OLED 310 emits light when theexciton falls from an excited state to a ground state.

The capacitor 80 includes a pair of capacitor plates (i.e., capacitorplates 258 and 278), having an insulating interlayer 245 interposedtherebetween. In some embodiments, the insulating interlayer 245 may bea dielectric element. A capacitance of the capacitor 80 is determined byelectric charges accumulated in the capacitor 80 and a voltage acrossthe pair of capacitor plates (i.e., capacitor plates 258 and 278).

The switching TFT 10 includes a switching semiconductor layer 231, aswitching gate electrode 252, a switching source electrode 273 and aswitching drain electrode 274. The driving TFT 20 includes a drivingsemiconductor layer 232, a driving gate electrode 255, a driving sourceelectrode 276 and a driving drain electrode 277. A gate insulating layer241 is further provided to insulate the switching semiconductor layer231 and the switching gate electrode 252 and to insulate the drivingsemiconductor layer 232 and the driving gate electrode 255.

The switching TFT 10 may function as a switching element which selects apixel to perform light emission. The switching gate electrode 252 isconnected to the gate line 251 and the switching source electrode 273 isconnected to the data line 271. The switching drain electrode 274 isconnected to one of the capacitor plates, e.g., the capacitor plate 258,and is spaced apart from the switching source electrode 273.

The driving TFT 20 applies a driving power, which allows the lightemitting layer 312 of the OLED 310 in a selected pixel to emit light, tothe first electrode 311 which is a pixel electrode. The driving gateelectrode 255 is connected to the capacitor plate 258 that is connectedto the switching drain electrode 274. Each of the driving sourceelectrode 276 and the other of the capacitor plates, e.g., the capacitorplate 278, is connected to the common power line 272. The driving drainelectrode 277 is connected to the first electrode 311 of the OLED 310through a contact hole (or a contact opening) defined in a planarizationlayer 246.

With the above-described structure, the switching TFT 10 is driven basedon a gate voltage applied to the gate line 251 and serves to transmit adata voltage applied to the data line 271 to the driving TFT 20. Avoltage equivalent to a difference between a common voltage applied tothe driving TFT 20 from the common power line 272 and the data voltagetransmitted by (or from) the switching TFT 10 is stored in the capacitor80 and a current corresponding to the voltage stored in the capacitor 80flows to the OLED 310 through the driving TFT 20 such that the OLED 310may emit light.

According to the ninth exemplary embodiment, the first electrode 311 isa reflective electrode and the second electrode 313 is asemi-transmissive electrode. Accordingly, a light generated in the lightemitting layer 312 is emitted through the second electrode 313.

For example, the first electrode 311 may include a reflective layerincluding one or more metals selected from: magnesium (Mg), silver (Ag),gold (Au), calcium (Ca), lithium (Li), chromium (Cr), copper (Cu) andaluminum (Al), and a transparent conductive layer on the reflectivelayer. The transparent conductive layer may include a transparentconductive oxide (TCO). Examples of the TCO may include: indium tinoxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), aluminum zincoxide (AZO), and/or indium oxide (In₂O₃).

In addition, the first electrode 311 may have a triple-layer structurein which a transparent conductive layer, a reflective layer and atransparent conductive layer are sequentially stacked.

The second electrode 313 may include a semi-transmissive layer includingone or more metals selected from: magnesium (Mg), silver (Ag), gold(Au), calcium (Ca), lithium (Li), chromium (Cr), copper (Cu) andaluminum (Al).

In some embodiments, at least one of a hole injection layer (HIL) and ahole transport layer (HTL) may further be provided between the firstelectrode 311 and the light emitting layer 312 and at least one of anelectron transport layer (ETL) and an electron injection layer (EIL) mayfurther be provided between the light emitting layer 312 and the secondelectrode 313. The light emitting layer 312, the hole injection layer(HIL), the hole transport layer (HTL), the electron transport layer(ETL) and the electron injection layer (EIL) may include an organicmaterial and thus may be referred to as an organic layer.

A pixel defining layer 290 is disposed on the driving circuit unit 230and has an opening. The first electrode 311, the light emitting layer312 and the second electrode 313 are sequentially stacked in the openingof the pixel defining layer 290. The second electrode 313 is formed onthe pixel defining layer 290 as well as the light emitting layer 312. Inan exemplary embodiment, the hole injection layer (HIL), the holetransport layer (HTL), the electron transport layer (ETL) and theelectron injection layer (EIL) may also be disposed between the pixeldefining layer 290 and the second electrode 313. The OLED 310 generateslight from the light emitting layer 312 positioned in the opening of thepixel defining layer 290. For example, the pixel defining layer 290 maydefine a light emitting area.

A capping layer may be provided on the second electrode 313, whichprotects the OLED 310 from an external environment.

A second substrate 212 is disposed on the second electrode 313. Thesecond substrate 212 seals the OLED 310 together with the firstsubstrate 211. The second substrate 212, similar to the first substrate211, may include an insulating material such as glass, quartz, ceramic,plastic, or the like.

A buffer material 302 may be disposed between the OLED 310 and thesecond substrate 212. The buffer material 302 protects the OLED 310 andthe like against an impact that may be externally applied to the OLEDdisplay device 109. The buffer material 302 may include at least one of,for example, a urethane-based resin, an epoxy-based resin, an acrylicresin, and silicone that is an inorganic sealant.

An adhesive layer 295 is disposed on the display panel 210 and thewindow 100 is disposed on the adhesive layer 295. One of the plasticsubstrates 101, 102, 103, 104, 105, 106, 107 and 108 according to thefirst, second, third, fourth, fifth, sixth, seventh and eighth exemplaryembodiments may be utilized as the window 100. The firstorganic-inorganic hybrid layer 121 of the plastic substrates 101, 102,103, 104, 105, 106, 107 and 108 according to the first, second, third,fourth, fifth, sixth, seventh and eighth exemplary embodiments ispositioned on the opposite side from the display panel 210.

Hereinafter, a tenth exemplary embodiment is described with reference toFIG. 14.

FIG. 14 is a cross-sectional view illustrating an OLED display device1010 according to a tenth exemplary embodiment. The OLED display device1010 according to the tenth exemplary embodiment includes a thin filmencapsulation layer 350 provided on the second electrode 313 to protectthe OLED 310.

The thin film encapsulation layer 350 includes one or more inorganiclayers and one or more organic layers, and substantially preventsoutside air such as moisture or oxygen from permeating into the OLED310, or reduces the likelihood thereof.

The thin film encapsulation layer 350 may have a structure in which theinorganic layers 351, 353 and 355 and the organic layers 352 and 354 arealternately stacked. In FIG. 14, the thin film encapsulation layer 350includes three inorganic layers (i.e., the inorganic layers 351, 353 and355) and two organic layers (i.e., the organic layers 352 and 354), butthe structure of the thin film encapsulation layer 350 according to thetenth exemplary embodiment is not limited thereto.

Each of the inorganic layers 351, 353 and 355 may include one or moreinorganic materials, such as Al₂O₃, TiO₂, ZrO, SiO₂, AlON, AlN, SiON,Si₃N₄, ZnO and Ta₂O₅. The inorganic layers 351, 353 and 355 may beformed through methods such as a chemical vapor deposition (CVD) methodor an atomic layer deposition (ALD) method. However, exemplaryembodiments are not limited thereto and the inorganic layers 351, 353and 355 may be formed using various methods known to those skilled inthe art.

The organic layers 352 and 354 may include a polymer-based material.Examples of the polymer-based material may include, for example, anacrylic resin, an epoxy resin, polyimide and/or polyethylene. Inaddition, the organic layers 352 and 354 may be formed through a thermaldeposition process. The thermal deposition process for forming theorganic layers 352 and 354 may be performed in a temperature range thatmay not damage the OLED 310. However, the tenth exemplary embodiment isnot limited thereto and the organic layers 352 and 354 may be formedusing various methods known to those skilled in the pertinent art.

The inorganic layers 351, 353, and 355, which have a high density ofthin layers, may prevent or efficiently reduce infiltration of moistureand/or oxygen. Permeation of moisture and oxygen into the OLED 310 maybe largely prevented by the inorganic layers 351, 353, and 355, or thelikelihood thereof may be reduced.

The organic layers 352 and 354 may also serve as a buffer layer toreduce stress among respective ones of the inorganic layers 351, 353 and355, in addition to reducing (or preventing) moisture-infiltration.Further, because the organic layers 352 and 354 have planarizationcharacteristics, an uppermost surface of the thin film encapsulationlayer 350 may be planarized.

The thin film encapsulation layer 350 may have a relatively smallthickness of about 10 μm or less. Accordingly, the OLED display device1010 may also have a relatively small thickness.

When the thin film encapsulation layer 350 is disposed on the OLED 310,the second substrate 212 may be omitted. When the second substrate 212is omitted, the flexible characteristics of the OLED display device 1010are improved.

The adhesive layer 295 is disposed on the thin film encapsulation layer350 and the window 100 is disposed on the adhesive layer 295.

FIG. 15 is a plan view illustrating a liquid crystal display (“LCD”)device 1011 according to an eleventh exemplary embodiment, and FIG. 16is a cross-sectional view taken along the line II-II′ of FIG. 15.

The LCD device 1011 according to the eleventh exemplary embodimentincludes an LCD panel 400 and a window 100 on the LCD panel 400.

The LCD panel 400 includes a display substrate 410, an opposingsubstrate 420 and a liquid crystal layer LC between the displaysubstrate 410 and the opposing substrate 420.

The display substrate 410 includes a first substrate 401 and a gate lineGL, a data line DL, a thin film transistor TFT, a gate insulating layer421, an insulating interlayer 431, a first color filter 451, a secondcolor filter 452, a planarization layer 491, a pixel electrode PE and alight blocking portion 476 on the first substrate 401.

The gate line GL and a gate electrode GE extending from the gate line GLare disposed on the first substrate 401.

The gate insulating layer 421 is disposed on the gate line GL and thegate electrode GE. In some exemplary embodiments, the gate insulatinglayer 421 may be disposed over an entire surface of the first substrate401 including the gate line GL and the gate electrode GE. The gateinsulating layer 421 may include silicon nitride (SiNx), silicon oxide(SiOx), or the like. The gate insulating layer 421 may have amulti-layer structure including at least two insulating layers havingdifferent physical properties.

A semiconductor layer SM is disposed on the gate insulating layer 421.The semiconductor layer SM overlaps the gate electrode GE, a sourceelectrode SE and a drain electrode DE. The semiconductor layer SM mayinclude amorphous silicon, polycrystalline silicon, or the like. Thesemiconductor layer SM may include an oxide semiconductor material. Anohmic contact layer may be disposed on the semiconductor layer SM.

The source electrode SE is disposed to partially overlap thesemiconductor layer SM. The source electrode SE extends from the dataline DL.

The drain electrode DE is spaced apart from the source electrode SE andpartially overlaps the semiconductor layer SM. The drain electrode DE isconnected to the pixel electrode PE. The drain electrode DE and thesource electrode SE may be formed concurrently (or substantiallysimultaneously) in a substantially same process.

The thin film transistor TFT is defined by the gate electrode GE, thesemiconductor layer SM, the source electrode SE and the drain electrodeDE.

A channel area of the thin film transistor TFT is positioned at aportion of the semiconductor layer SM between the source electrode SEand the drain electrode DE.

The data line DL is disposed on the gate insulating layer 421 andcrosses the gate line GL. The data line DL and the source electrode SEmay be formed substantially simultaneously in a substantially sameprocess.

The semiconductor layer SM may be further provided between the gateinsulating layer 421 and the source electrode SE and may be furtherprovided between the gate insulating layer 421 and the drain electrodeDE. In addition, the semiconductor layer SM may be further providedbetween the gate insulating layer 421 and the data line DL.

The insulating interlayer 431 is disposed on the data line DL, thesource electrode SE, the drain electrode DE, the semiconductor layer SMand the gate insulating layer 421. In some exemplary embodiments, theinsulating interlayer 431 may be disposed over an entire surface of thefirst substrate 401 including the data line DL, the source electrode SE,the drain electrode DE and the gate insulating layer 421. Referring toFIGS. 15 and 16, the insulating interlayer 431 has a drain contact hole(or a drain contact opening) 432.

The insulating interlayer 431 may include an inorganic insulatingmaterial such as silicon nitride (SiNx) or silicon oxide (SiOx), or mayinclude an organic layer. In addition, the insulating interlayer 431 mayhave a bilayer structure including a lower inorganic layer and an upperorganic layer.

The first color filter 451 and the second color filter 452 are disposedon the insulating interlayer 431. Edges of the first and second colorfilters 451 and 452 may be positioned on the gate line GL, the thin filmtransistor TFT and the data line DL. Edges of adjacent ones of the firstand second color filters 451 and 452 may overlap each other. Each of thefirst and second color filters 451 and 452 has an opening defined tocorrespond to the drain electrode DE. Each of the first and second colorfilters 451 and 452 may include a photosensitive organic material.

The first color filter 451 and the second color filter 452 havedifferent colors and may each be one of a red color filter, a greencolor filter, a blue color filter, a cyan color filter, a magenta colorfilter, a yellow color filter and a white color filter.

The LCD device 1011 according to the eleventh exemplary embodiment mayfurther include a third color filter. The third color filter has a colordifferent from those of the first color filter 451 and the second colorfilter 452 and may be one of a red color filter, a green color filter, ablue color filter, a cyan color filter, a magenta color filter and ayellow color filter.

However, the eleventh exemplary embodiment is not limited thereto andthe first and second color filters 451 and 452 may be disposed on asecond substrate 402, for example.

The planarization layer 491 is disposed on the first and second colorfilters 451 and 452. In some exemplary embodiments, the planarizationlayer 491 may be disposed over an entire surface of the first substrate401 including the first and second color filters 451 and 452 and theinsulating interlayer 431. However, referring to FIGS. 15 and 16, theplanarization layer 491 may have an opening defined to correspond to thedrain contact hole 432.

The planarization layer 491 functions as a protective layer andplanarizes a portion below the pixel electrode PE. The planarizationlayer 491 may be referred to as a protective layer. The planarizationlayer 491 may include an organic material, for example, a photosensitiveorganic material and/or a photosensitive resin composition. In someexemplary embodiments, the planarization layer 491 may be also referredto as an organic layer.

The pixel electrode PE is connected to the drain electrode DE throughthe drain contact hole 432. The pixel electrode PE is disposed on theplanarization layer 491. A part of an edge of the pixel electrode PE mayoverlap the light blocking portion 476.

The light blocking portion 476 is disposed on the pixel electrode PE andthe planarization layer 491. For example, the light blocking portion 476overlaps the TFT, the gate lines GL and the data line DL to block lightleakage.

As illustrated in FIG. 16, a column spacer 472 may be positioned on thelight blocking portion 476. The column spacer 472 has a shape protrudingfrom the light blocking portion 476 toward the opposing substrate 420 toa predetermined height. The column spacer 472 maintains a cell gapbetween the display substrate 410 and the opposing substrate 420.

The column spacer 472 and the light blocking portion 476 may be unitary(e.g., in a monolithic structure). In some exemplary embodiments, thecolumn spacer 472 and the light blocking portion 476 may be concurrently(or substantially simultaneously) manufactured using a substantially thesame material. The column spacer 472 and the light blocking portion 476may be collectively referred to as a black column spacer (BCS).

The opposing substrate 420 includes the second substrate 402 and acommon electrode CE on the second substrate 402.

The liquid crystal layer LC is disposed between the display substrate410 and the opposing substrate 420.

An adhesive layer 295 is disposed on the LCD panel 400 including thedisplay substrate 410, the liquid crystal layer LC and the opposingsubstrate 420, and the window 100 is disposed on the adhesive layer 295.

One of the plastic substrates 101, 102, 103, 104, 105, 106, 107 and 108according to the first, second, third, fourth, fifth, sixth, seventh andeighth exemplary embodiments may be utilized as the window 100. Thefirst organic-inorganic hybrid layer 121 of the plastic substrates 101,102, 103, 104, 105, 106, 107 and 108 according to the first, second,third, fourth, fifth, sixth, seventh and eighth exemplary embodiments ispositioned on the opposite side from the LCD panel 400.

As set forth hereinabove, according to one or more exemplaryembodiments, the plastic substrate has excellent hardness and abrasionresistance. Accordingly, the plastic substrate may be utilized as awindow for display devices.

While certain embodiments of the present invention have been illustratedand described, it is understood by those of ordinary skill in the artthat certain modifications and changes can be made to the describedembodiments without departing from the spirit and scope of the presentinvention as defined by the following claims, and equivalents thereof.

What is claimed is:
 1. A plastic substrate comprising: a plastic supportmember having light transmittance; and a first organic-inorganic hybridlayer on the plastic support member, the first organic-inorganic hybridlayer comprising: a first organic-inorganic hybrid matrix; and ionsimplanted into the first organic-inorganic hybrid matrix at a sideopposite to a side adjacent the plastic support member, wherein anamount of the ions per unit area is in a range from about 2×10¹³/cm² toabout 2×10¹⁴/cm².
 2. The plastic substrate as claimed in claim 1,wherein an implantation depth of the ions is in a range from about 300nm to about 400 nm.
 3. The plastic substrate as claimed in claim 1,wherein the ions are implanted at an energy in a range from about 60 keVto about 80 keV.
 4. The plastic substrate as claimed in claim 1, whereinthe ions comprise at least one of a boron (B) ion and a nitrogen (N)ion.
 5. The plastic substrate as claimed in claim 1, wherein the firstorganic-inorganic hybrid matrix comprises a silicone resin and a polymerresin.
 6. The plastic substrate as claimed in claim 1, wherein the firstorganic-inorganic hybrid layer has a thickness ranging from about 2 μmto about 20 μm.
 7. The plastic substrate as claimed in claim 1, whereinthe plastic support member comprises at least one selected from thegroup consisting of: a polycarbonate (PC) film, a polyacrylic film, apolymethyl methacrylate (PMMA) film, a polyimide (PI) film, apolyethylene (PET) film, a polypropylene (PP) film, a polystyrene (PS)film, a polyamide (PA) film, a polyacetal (POM) film, a polybutyleneterephthalate (PBT) film, a cellulose film and an acrylic-polycarbonatecopolymer alloy film.
 8. The plastic substrate as claimed in claim 1,further comprising a first inorganic layer between the plastic supportmember and the first organic-inorganic hybrid layer.
 9. The plasticsubstrate as claimed in claim 8, further comprising a secondorganic-inorganic hybrid layer between the plastic support member andthe first inorganic layer.
 10. The plastic substrate as claimed in claim1, further comprising a first organic layer between the plastic supportmember and the first organic-inorganic hybrid layer.
 11. A method ofmanufacturing a plastic substrate, the method comprising: forming afirst organic-inorganic hybrid matrix on a plastic support member, theplastic support member having light transmittance; and implanting ionsinto the first organic-inorganic hybrid matrix, wherein an amount of theions per unit area is in a range from about 2×10¹³/cm² to about2×10¹⁴/cm².
 12. The method as claimed in claim 11, wherein animplantation depth of the ions is in a range from about 300 nm to about400 nm.
 13. The method as claimed in claim 11, wherein the ions areimplanted at an energy in a range from about 60 keV to about 80 keV. 14.The method as claimed in claim 11, wherein the ions comprise at leastone of a boron (B) ion and a nitrogen (N) ion.
 15. A display devicecomprising: a display panel; and a window on the display panel, thewindow comprising: a plastic support member having light transmittance;and a first organic-inorganic hybrid layer on the plastic supportmember, the first organic-inorganic hybrid layer comprising ionsimplanted at a side opposite to a side adjacent the plastic supportmember, wherein an amount of the ions per unit area is in a range fromabout 2×10¹³/cm² to about 2×10¹⁴/cm².